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07/20/10 www.irf.com 1 auirfb4610 AUIRFS4610 hexfet power mosfet s d g d 2 pak AUIRFS4610 to-220ab auirfb4610 s d g d s d g d automotive grade specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. description advanced process technology ultra low on-resistance enhanced dv/dt and di/dt capability 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * features hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v ( br ) dss 100v r ds ( on ) typ. 11m max. 14m i d 73a gds gate drain source absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.77 r cs case-to-sink, flat greased surface , to-220 0.50 ??? c/w r ja junction-to-ambient, to-220 ??? 62 r ja junction-to-ambient (pcb mount) , d 2 pak ??? 40 10lbf in (1.1n m) 300 max. 73 52 290 a c 370 see fig. 14, 15, 16a, 16b, 190 7.6 -55 to + 175 20 1.3

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.39mh r g = 25 ? , i as = 44a, v gs =10v. part not recommended for use above this value. i sd 44a, di/dt 660a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. s d g c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994. *+'( static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown volta g e 100 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.085 ??? v/c r ds(on) static drain-to-source on-resistance ??? 11 14 m ? v gs(th) gate threshold volta g e 2.0 ??? 4.0 v g fs forward transconductance 73 ??? ??? s r g gate input resistance ??? 1.5 ??? ? f = 1mhz, open drain i dss drain-to-source leaka g e current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 200 gate-to-source reverse leaka g e ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate char g e ??? 90 140 q gs gate-to-source char g e ??? 20 ??? q gd gate-to-drain ("miller") char g e ??? 36 ??? t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 87 ??? t d(off) turn-off delay time ??? 53 ??? t f fall time ??? 70 ??? c iss input capacitance ??? 3550 ??? c oss output capacitance ??? 260 ??? c rss reverse transfer capacitance ??? 150 ??? c oss eff. (er) effective output capacitance (ener g y related) ??? 330 ??? c oss eff. (tr) effective output capacitance (time related) ??? 380 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward volta g e ??? ??? 1.3 v t rr reverse recovery time ??? 35 53 t j = 25c v r = 85v, ??? 42 63 t j = 125c i f = 44a q rr reverse recovery char g e ??? 44 66 t j = 25c di/d t = 100a/ s ??? 65 98 t j = 125c i rrm reverse recovery current ??? 2.1 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is ne g li g ible (turn-on is dominated by ls+ld) conditions v ds = 50v, i d = 44a i d = 44a v gs = 20v v gs = -20v mosfet symbol showing the v ds = 80v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 80v , see fig.11 v gs = 0v, v ds = 0v to 80v t j = 25c, i s = 44a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 44a v ds = v gs , i d = 100a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c i d = 44a r g = 5.6 ? v gs = 10v v dd = 65v a na nc ns pf a 73 290 ns nc ??? ??? ??? ???

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qualification information ? to-220ab n/a d 2 pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c3 (750v) (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4(400v) (per aec-q101-002) human body model class h1c(2000v) (per aec-q101-001)

4 www.irf.com fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 140 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 44a -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 73a v gs = 10v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v

www.irf.com 5 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t j , junction temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 100 105 110 115 120 125 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e 0 20 40 60 80 100 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.6a 6.3a bottom 44a 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc

6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature ri (c/w) i (sec) 0.4367 0.001016 0.3337 0.009383 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as neither t jmax nor i av (max) is exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 44a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)

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-75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a id = 100a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 44a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 29a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 q r r - ( n c ) i f = 44a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 q r r - ( n c ) i f = 29a v r = 85v t j = 125c t j = 25c

8 www.irf.com fig 23a. switching time test circuit fig 23b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21. )*+ &%&
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period , , -&,! . . / , + - + + + - - - , ? ! ? "#$## ? % && ? #$##'$

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3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

12 www.irf.com ordering information base p art packa g e t yp e standard pac k com p lete part number form quantit y auirfb4610 to-220 tube 50 auirfb4610 AUIRFS4610 d2pak tube 50 AUIRFS4610 tape and reel left 800 AUIRFS4610strl tape and reel right 800 AUIRFS4610strr

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